de Haas-van!Alphen effect investigations of the electronic structure of pure and aluminum-doped MgB2

被引:14
作者
Carrington, A.
Yelland, E. A.
Fletcher, J. D.
Cooper, J. R.
机构
[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England
[2] Univ Cambridge, Dept Phys, Cambridge CB3 0HE, England
来源
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2007年 / 456卷 / 1-2期
基金
英国工程与自然科学研究理事会;
关键词
MgB2; Fermi surface; band structure; quantum oscillations; SINGLE-CRYSTALS; FERMI-SURFACE; SUPERCONDUCTIVITY; STATES;
D O I
10.1016/j.physc.2007.01.027
中图分类号
O59 [应用物理学];
学科分类号
摘要
Our understanding of the superconducting properties of MgB2 is strongly linked to our knowledge of its electronic structure. In this paper we review experimental measurements of the Fermi surface parameters of pure and M-doped MgB2 using the de Haas-van Alphen (dHvA) effect. In general, the measurements are in excellent agreement with the theoretical predictions of the electronic structure, including the strength of the electron-phonon coupling on each Fermi surface sheet. For the At doped samples, we are able to measure how the band structure changes with doping. These results are in excellent agreement with calculations based on the virtual crystal approximation. We also review work on the dHvA effect in the superconducting state. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:92 / 101
页数:10
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