Photoluminescence and structural properties of cadmium sulphide thin films grown by different techniques

被引:73
作者
Aguilar-Hernández, J
Contreras-Puente, G
Morales-Acevedo, A
Vigil-Galán, O
Cruz-Gandarilla, F
Vidal-Larramendi, J
Escamilla-Esquivel, A
Hernández-Contreras, H
Hesiquio-Garduño, M
Arias-Carbajal, A
Chavarría-Castañeda, M
Arriaga-Mejía, G
机构
[1] Inst Politecn Nacl, Escuela Super Fis & Matemat, Mexico City 07738, DF, Mexico
[2] IPN, CINVESTAV, Dept Ingn Elect, SEES, Mexico City, DF, Mexico
[3] Univ La Habana, Fac Fis, IMRE, Havana 10400, Cuba
[4] Univ La Habana, Fac Quim, IMRE, Dept Quim Inorgan, Havana 10400, Cuba
关键词
D O I
10.1088/0268-1242/18/2/308
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we present a comparative study of photoluminescence and its relation to the structural properties of cadmium sulphide (CdS) thin films grown by chemical bath deposition (CBD), close spaced vapour transport, laser ablation (LA) and sputtering. Taking into account that the physical properties of US thin films depend upon the growth technique and the optimization of the deposition conditions for each technique, we show that the best crystal perfection occurs for LA-CdS films since the main photoluminescence peak at low temperature is due to bound excitons (2.53 eV). As expected, the films with the worst crystalline quality are those grown by CBD, ascertained by the photoluminescence band around 1.72 eV due to sulfur vacancies ('red band') without the corresponding exciton band. The photoluminescence results are correlated to x-ray diffraction measurements that confirm the above results.
引用
收藏
页码:111 / 114
页数:4
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