Indium sulfide buffer/CIGSSe interface engineering:: Improved cell performance by the addition of zinc sulfide

被引：15

作者：

Allsop, N. A. ^{[1
]}

Camus, C. ^{[1
]}

Haensel, A. ^{[1
]}

Gledhill, S. E. ^{[1
]}

Lauermann, I. ^{[1
]}

Lux-Steiner, M. C. ^{[1
]}

Fischer, Ch.-H. ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, Dept SE2, D-14109 Berlin, Germany

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 15期

关键词：

solar cell; buffer layer; ILGAR; indium sulfide; zinc sulfide; CIGSSe; CIS; chalcopyrite;

D O I：

10.1016/j.tsf.2006.12.084

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium sulfide buffer layers deposited by the spray-ion layer gas reaction (Spray-ILGAR) technique are a viable alternative to the traditional cadmium sulfide buffer layer in thin film solar cells. In the present work we report on the results of manipulating the absorber/buffer interface between the chalcopyrite Cu(In,Ga)(S,Se)(2) absorber (CIGSSe) and the indium sulfide buffer. It is shown that the deposition of a small amount of zinc sulfide at the absorber/buffer interface can be used to increase the open circuit voltage. A small but significant increase of 20 mV (up to 580 mV), as compared to the pure indium sulfide buffered cells is possible leading to an increase in the overall efficiency. (C) 2006 Elsevier B.V All rights reserved.

引用

页码：6068 / 6072

页数：5

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