Device parameter optimization for reduced short channel effects in retrograde doping MOSFET's

被引：22

作者：

Agrawal, B ^{[1
]}

De, VK ^{[1
]}

Meindl, JD ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12180 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 02期

关键词：

D O I：

10.1109/16.481743

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple technique to optimize the device parameters of the retrograde channel doping MOSFET to minimize short channel effects for a constant threshold voltage is presented in this work. The results indicate that the highest possible substrate doping does not necessarily result in minimum short channel effects.

引用

页码：365 / 368

页数：4

共 12 条

[1]

AGRAWAL B, 1993, ESSDERC '93 - PROCEEDINGS OF THE 23RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, P919

[2]

AGRAWAL B, 1994, THESIS RENSSELAER PO

[3]

Antoniadis D. A., 1991, International Electron Devices Meeting 1991. Technical Digest (Cat. No.91CH3075-9), P21, DOI 10.1109/IEDM.1991.235433

[4]

Aoki M., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P939, DOI 10.1109/IEDM.1990.237087

[5] GENERALIZED GUIDE FOR MOSFET MINIATURIZATION [J].

BREWS, JR ;

FICHTNER, W ;

NICOLLIAN, EH ;

SZE, SM .

ELECTRON DEVICE LETTERS, 1980, 1 (01) :2-4

[6]

FIEGNA C, 1993, 1993 SYMPOSIUM ON VLSI TECHNOLOGY, P33

[7]

Frank D. J., 1992, International Electron Devices Meeting 1992. Technical Digest (Cat. No.92CH3211-0), P553, DOI 10.1109/IEDM.1992.307422

[8] A FULLY DEPLETED LEAN-CHANNEL TRANSISTOR (DELTA) - A NOVEL VERTICAL ULTRATHIN SOI MOSFET [J].

HISAMOTO, D ;

KAGA, T ;

KAWAMOTO, Y ;

TAKEDA, E .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (01) :36-38

[9]

Nagata M., 1991, 1991 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.91CH3018-9), P39, DOI 10.1109/VLSIC.1991.760069

[10] AN IMPROVED GENERALIZED GUIDE FOR MOSFET SCALING [J].

NG, KK ;

ESHRAGHI, SA ;

STANIK, TD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (10) :1895-1897

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