Set-sweep programming pulse for phase-change memories

被引：5

作者：

Bedeschi, F.

Boffin, C.

Bonizzoni, E.

Resta, C.

Toreih, G.

Zella, D.

机构：

[1] STMicroelect, Memory Prod Grp, I-20041 Agrate Brianza, Italy

[2] Univ Pavia, Dept Elect, I-27100 Pavia, Italy

[3] STMicroelect & Univ Pavia, Studio Microelettron, I-27100 Pavia, Italy

[4] STMicroelect, Automot Prod Grp, I-20010 Cornaredo, Italy

来源：

2006 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-11, PROCEEDINGS | 2006年

关键词：

D O I：

10.1109/ISCAS.2006.1692748

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents a non-conventional program pulse approach for Phase-Change Memories (PCMs). The cell programming curve is experimentally evaluated and discussed. The proposed Set-Sweep program pulse allows compensating for spreads in cell physical parameters. This ensures a better SET condition for marginal cells and adequately narrow SET distributions, which results in improved read margin. Experimental results have been collected from a 8-Mb BJT-selected PCM demonstrator. The effectiveness of the proposed program pulse has been proved by comparing cell distributions obtained on the whole array by means of a conventional SET box and a Set-Sweep program pulse, respectively.

引用

页码：967 / 970

页数：4

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