Impurity incorporation mechanism in step-controlled epitaxy growth temperature and substrate off-angle dependence

被引：55

作者：

Yamamoto, T ^{[1
]}

Kimoto, T ^{[1
]}

Matsunami, H ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 60601, Japan

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

step-controlled epitaxy; impurity incorporation; growth temperature; off-angle; C/Si ratio; surface polarity; thermal desorption; (11(2)over-bar-0) substrate; SIMS depth profile;

D O I：

10.4028/www.scientific.net/MSF.264-268.111

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

For precise control of impurity incorporation into SiC epilayers, we made clear how impurities incorporate in grown layers, by changing several epitaxial growth parameters : C/Si ratio, substrate surface polarity, growth temperature and substrate off-angle. Impurity incorporation strongly depends on growth temperature, which is caused by a thermal desorption process. The site replaced by an impurity, surface polarity, off-angle are related each other, and they severely influence impurity incorporation. On a (<11(2)over bar 0>) substrate, the C/Si ratio dependence of impurity incorporation is between the cases on Si-and C-faces.

引用

页码：111 / 114

页数：4