Sol-gel-derived Er-activated SiO2-HfO2 planar waveguides for 1.5 μm application

被引：57

作者：

Zampedri, L

Righini, GC

Portales, H

Pelli, S

Conti, GN

Montagna, M

Mattarelli, M

Gonçalves, RR

Ferrari, M

Chiasera, A

Bouazaoui, M

Armellini, C

机构：

[1] Univ Trent, Dipartimento Ingn Mat, I-38050 Trento, Italy

[2] CNR IFN, Ist Foton & Nanotecnol, CSMFO Grp, I-38050 Trento, Italy

[3] CNR IFAC, Ist Fis Applicata, I-50127 Florence, Italy

[4] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy

[5] INFM, I-35131 Padua, Italy

[6] Univ Trent, Dipartimento Fis, I-38050 Trento, Italy

[7] Univ Sci & Technol Lille, CERLA, CNRS, UMR 8523,Lab PhLAM,UFR Phys, F-59655 Villeneuve Dascq, France

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2004年 / 345卷

关键词：

D O I：

10.1016/j.jnoncrysol.2004.08.088

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

(100 - x)SiO2-xHfO(2) (x = 10, 20,30,40 mol) planar waveguides, doped with 0.3 mol% Er3+ ions were prepared by the sol-gel route, using dip-coating deposition on V-Si02 substrates. The waveguides were characterized by m-line, Raman and photoluminescence spectroscopies. The results are discussed with the aim of assessing the role of hafnia on the structural, optical and spectroscopic properties of the erbium-doped silica-hafnia planar waveguides. The spectral bandwidth of the I-4(13/2) --> I-4(15/2) transition does not change practically with the hafnium content. The I-4(13/2) level decay curves present a single-exponential profile, with a lifetime between 5.5 and 7.1 ms, depending on the HfO2 concentration. (C) 2004 Published by Elsevier B.V.

引用

页码：580 / 584

页数：5

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