Grain size control in nanocrystalline In2O3 semiconductor gas sensors

被引:223
作者
Gurlo, A
Ivanovskaya, M
Barsan, N
Schweizer-Berberich, M
Weimar, U
Gopel, W
Dieguez, A
机构
[1] Belarusian State Univ, Sci & Res Inst Phys & Chem Problems, Minsk 220050, BELARUS
[2] Univ Tubingen, Inst Phys & Theoret Chem, D-72076 Tubingen, Germany
[3] Univ Barcelona, Dept Fis Aplicada & Elect, EME, E-08028 Barcelona, Spain
来源
SENSORS AND ACTUATORS B-CHEMICAL | 1997年 / 44卷 / 1-3期
关键词
indium oxide; sol-gel; gas sensors; nitrogen dioxide; grain size; nanocrystallites;
D O I
10.1016/S0925-4005(97)00199-8
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
In2O3 thin films prepared by sol-gel method make it possible to detect low levels (several hundreds ppb) of nitrogen dioxide in air. The possibility of grain size control in indium oxide-sensing layers has been established by using of two preparation methods-electron beam evaporation (EB) and sol-gel technique (SG). SG-prepared samples show smaller particles sizes (down to 5 nm), higher state of agglomeration, higher sensor resistance in air and higher response to NO2 in comparison to EB samples. Sol-gel technique leads to the preparation of polycrystalline indium oxide with particle sizes of about 5-6 nm after calcination at 400 degrees C and 20 nm after calcination at 700 degrees C. The initial state of particle agglomeration in initial indium hydroxide sol (IHS), stabilized with nitric acid, influences the structure and surface morphology of the resulting indium oxide. While the In2O3 layer prepared by using low agglomerated IHS is smooth and porous, In2O3 layers prepared from highly agglomerated IHS consist of two regions-thin layer and crystallite agglomerates in cubic and rectangular parallelepiped form. The last shows the best results in terms of NO2 sensitivity. Sensor resistance and NO2 sensitivity increase with the decrease of the grain sizes in In2O3. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:327 / 333
页数:7
相关论文
共 14 条
  • [1] Demarne V, 1992, GAS SENSORS PRINCIPL, V3, P89
  • [2] Morphological analysis of nanocrystalline SnO2 for gas sensor applications
    Dieguez, A
    RomanoRodriguez, A
    Morante, JR
    Weimar, U
    SchweizerBerberich, M
    Gopel, W
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 1996, 31 (1-2) : 1 - 8
  • [3] SNO2 SENSORS - CURRENT STATUS AND FUTURE-PROSPECTS
    GOPEL, W
    SCHIERBAUM, KD
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 1995, 26 (1-3) : 1 - 12
  • [4] GOPEL W, 1991, SENSORS COMPREHENSIV, V2, P61
  • [5] GURLO A, IN PRESS THIN SOLID
  • [6] GURLO A, 1996, E MRS SPRING M 1996
  • [7] ORLIK D, 1993, 1 INT C MAT CHEM AB
  • [8] Orlik DR, 1995, J ANAL CHEM+, V50, P1073
  • [9] AQUEOUS OZONE DETECTOR USING IN2O3 THIN-FILM SEMICONDUCTOR GAS SENSOR
    TAKADA, T
    TANJOU, H
    SAITO, T
    HARADA, K
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 1995, 25 (1-3) : 548 - 551
  • [10] HIGHLY SENSITIVE OZONE SENSOR
    TAKADA, T
    SUZUKI, K
    NAKANE, M
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 1993, 13 (1-3) : 404 - 407