Triangular-facet laser with optical waveguides grown by selective area metalorganic chemical vapor deposition

被引:13
作者
Ando, S
Kobayashi, N
Ando, H
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1996年 / 35卷 / 4A期
关键词
metalorganic chemical vapor deposition; selective epitaxy; facet; semiconductor laser; optical waveguide; ring cavity mode;
D O I
10.1143/JJAP.35.L411
中图分类号
O59 [应用物理学];
学科分类号
摘要
A triangular prism-shaped GaAs/AlGaAs laser with rectangular optical waveguides at three corners is proposed and its preliminary lasing characteristics and waveguiding of lasing light are presented. This structure is grown by selective area metalorganic chemical vapor deposition (MOCVD) and consists of a (111)B growth plane and (110) sidewall facets. The advantage of the triangular facet is that the prism growth proceeds while maintaining the equilateral triangle shape even if there is a little fluctuation in the size or shape of the mask and if the layer thickness is increased up to about 1.5 mu m. Lasing at room temperature is observed by optical pumping of low energy (E(th) < 10 pJ). The lasing light can be successfully extracted from the point of the rectangular waveguides. The lasing mode is found to be a ring cavity made of an inscribed equilateral triangle by the longitudinal mode spacing.
引用
收藏
页码:L411 / L413
页数:3
相关论文
共 7 条
  • [1] NOVEL HEXAGONAL-FACET GAAS/ALGAAS LASER GROWN BY SELECTIVE-AREA METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    ANDO, S
    KOBAYASHI, N
    ANDO, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (9B): : L1293 - L1296
  • [2] HEXAGONAL-FACET LASER WITH OPTICAL WAVE-GUIDES GROWN BY SELECTIVE-AREA METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    ANDO, S
    KOBAYASHI, N
    ANDO, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (1A): : L4 - L6
  • [3] SELECTIVE-AREA METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH FOR HEXAGONAL-FACET LASERS
    ANDO, S
    KOBAYASHI, N
    ANDO, H
    [J]. JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) : 302 - 307
  • [4] ANDO S, 1996, P 8 INT MOVPE CARD
  • [5] FLOW-RATE MODULATION EPITAXY OF GAAS
    KOBAYASHI, N
    MAKIMOTO, T
    HORIKOSHI, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (12): : L962 - L964
  • [6] MCCALL SL, 1989, APPL PHYS LETT, V54, P493
  • [7] MITSUGI S, 1994, JPN J APPL PHYS, V11, P6201