共 7 条
- [1] NOVEL HEXAGONAL-FACET GAAS/ALGAAS LASER GROWN BY SELECTIVE-AREA METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (9B): : L1293 - L1296
- [2] HEXAGONAL-FACET LASER WITH OPTICAL WAVE-GUIDES GROWN BY SELECTIVE-AREA METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (1A): : L4 - L6
- [4] ANDO S, 1996, P 8 INT MOVPE CARD
- [5] FLOW-RATE MODULATION EPITAXY OF GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (12): : L962 - L964
- [6] MCCALL SL, 1989, APPL PHYS LETT, V54, P493
- [7] MITSUGI S, 1994, JPN J APPL PHYS, V11, P6201