Neutral Mn acceptor in bulk GaN in high magnetic fields

被引:55
作者
Wolos, A
Wysmolek, A
Kaminska, M
Twardowski, A
Bockowski, M
Grzegory, I
Porowski, S
Potemski, M
机构
[1] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland
[2] PAS, High Pressure Res Ctr, PL-01142 Warsaw, Poland
[3] CNRS, F-38042 Grenoble 9, France
[4] Grenoble High Magnet Field Lab MPI FKF, F-38042 Grenoble 9, France
关键词
D O I
10.1103/PhysRevB.70.245202
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present magneto-optical studies of intra-center absorption band related to neutral Mn acceptor in GaN bulk crystals. The band is built of a zero-phonon line at 1.4166 eV followed by GaN phonon spectrum. Magneto-optical experiments performed in magnetic fields up to 22 T in both Faraday and Voigt configurations revealed very small influence of magnetic field on the spectrum. In particular no splitting of the zero-phonon line was observed. The only characteristic feature recorded in high magnetic fields was a step-like behavior of the spectral position of zero-phonon line measured in Faraday configuration. The step appeared at the magnetic field of about 7 T, with a shift in energy of about 1.3 meV. We interpret the behavior of the zero-phonon line in magnetic field based on crystal-field model for Mn3+(d(4)) ion in trigonal crystal field, undergoing Jahn-Teller distortion and spin-orbit coupling. Applied model explains reasonably experimental results, supporting strongly localized character of Mn neutral acceptor in GaN.
引用
收藏
页码:1 / 8
页数:8
相关论文
共 45 条
[1]  
ABRAGAM A, 1970, ELECT PARAMAGNETIC R, P670
[2]   Enhancement of magnetic properties by nitrogen implantation to Mn-implanted p-type GaN [J].
Baik, JM ;
Shon, Y ;
Kang, TW ;
Lee, JL .
APPLIED PHYSICS LETTERS, 2004, 84 (07) :1120-1122
[3]   CRYSTAL-FIELD SPECTRA OF 3DN IMPURITIES IN2-6 AND 3-5 COMPOUND SEMICONDUCTORS [J].
BARANOWSKI, JM ;
ALLEN, JW ;
PEARSON, GL .
PHYSICAL REVIEW, 1967, 160 (03) :627-+
[4]   PHOTOEXCITATION AND PHOTOIONIZATION OF NEUTRAL MANGANESE ACCEPTORS IN GALLIUM ARSENIDE [J].
CHAPMAN, RA ;
HUTCHINSON, WG .
PHYSICAL REVIEW LETTERS, 1967, 18 (12) :443-+
[5]   CR2+(3D4) ABSORPTION IN GAAS [J].
CLERJAUD, B ;
HENNEL, AM ;
MARTINEZ, G .
SOLID STATE COMMUNICATIONS, 1980, 33 (09) :983-985
[6]   Technology and materials issues in semiconductor-based magnetoelectronics [J].
De Boeck, J ;
Van Roy, W ;
Das, J ;
Motsnyi, V ;
Liu, Z ;
Lagae, L ;
Boeve, H ;
Dessein, K ;
Borghs, G .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (04) :342-354
[7]   Observation of spin-glass behavior in homogeneous (Ga,Mn)N layers grown by reactive molecular-beam epitaxy [J].
Dhar, S ;
Brandt, O ;
Trampert, A ;
Friedland, KJ ;
Sun, YJ ;
Ploog, KH .
PHYSICAL REVIEW B, 2003, 67 (16)
[8]   Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].
Dietl, T ;
Ohno, H ;
Matsukura, F ;
Cibert, J ;
Ferrand, D .
SCIENCE, 2000, 287 (5455) :1019-1022
[9]   Injection and detection of a spin-polarized current in a light-emitting diode [J].
Fiederling, R ;
Keim, M ;
Reuscher, G ;
Ossau, W ;
Schmidt, G ;
Waag, A ;
Molenkamp, LW .
NATURE, 1999, 402 (6763) :787-790
[10]   Spin resonance investigations of Mn2+ in wurtzite GaN and AlN films -: art. no. 165215 [J].
Graf, T ;
Gjukic, M ;
Hermann, M ;
Brandt, MS ;
Stutzmann, M ;
Ambacher, O .
PHYSICAL REVIEW B, 2003, 67 (16)