Bismuth Hall probes: Preparation, properties and application

被引:14
作者
Koseva, R. [1 ]
Moench, I. [1 ]
Schumann, J. [1 ]
Arndt, K. -F. [2 ]
Schmidt, O. G. [1 ]
机构
[1] IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden, Germany
[2] Tech Univ Dresden, Dept Chem, D-01062 Dresden, Germany
关键词
Bismuth; Hall probes; Structural properties; Electrical properties and measurements; Hydrogels; Swell sensor; ELECTRON-BEAM LITHOGRAPHY; POLYCRYSTALLINE SILICON; FILMS; MOBILITY;
D O I
10.1016/j.tsf.2010.02.010
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Bismuth Hall probes with an active area in the mu m(2) and sub-mu m(2) (down to (100 x 100) nm(2)) range have been fabricated on SiO(2)/Si substrates. The structural and electrical properties of Bi films with a thickness of 20-90 nm were investigated. Critical values of the structural characteristics, at which the film resistivity dependences undergo a distinct change were found. The transition to low resistivity, good crystallinity and high degree of texturing were observed at a film thickness of 65 nm. The potential use of the Bi Hall sensor as a swell sensor for monitoring the swelling of stimuli-sensitive hydrogels was demonstrated. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:4847 / 4851
页数:5
相关论文
共 18 条
[1]  
[Anonymous], XRAY DIFFRACTION PRO
[2]  
Arndt K.F., 2009, HYDROGELS BIOL PROPE
[3]   Structure-function relationship between preferred orientation of crystallites and electrical resistivity in thin polycrystalline ZnO:Al films -: art. no. 205414 [J].
Birkholz, M ;
Selle, B ;
Fenske, F ;
Fuhs, W .
PHYSICAL REVIEW B, 2003, 68 (20)
[4]   Patterning of thin Poly(N-viny1 pyrrolidone) films on silicon substrates by electron beam lithography [J].
Burkert, Sina ;
Schmidt, Thomas ;
Gohs, Uwe ;
Moench, Ingolf ;
Arndt, Karl-Friedrich .
JOURNAL OF APPLIED POLYMER SCIENCE, 2007, 106 (01) :534-539
[5]   Thickness dependence of electrical and optical properties of sputtered nickel oxide films [J].
Chen, HL ;
Lu, YM ;
Hwang, WS .
THIN SOLID FILMS, 2006, 498 (1-2) :266-270
[6]  
CHOUDHURY PR, 1973, J ELECTROCHEM SOC, V120, P1761
[7]  
Derossi D., 1991, Polymer gels: Fundamentals and biomedical applications
[8]  
GERLACH G, 2004, SENSOR ACTUAT B-CHEM, V555, P111
[9]  
*ICSD, 64705 ICSD FACH KARL
[10]   HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J].
KAMINS, TI .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4357-&