Structural and electronic characterization of the MgO/Mo(001) interface using STM

被引:19
作者
Benia, H. M. [1 ]
Myrach, P. [1 ]
Nilius, N. [1 ]
Freund, H. -J. [1 ]
机构
[1] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany
关键词
Oxide thin films; Nucleation and growth; Coincidence lattice; MgO; Mo; Scanning tunneling microscopy and spectroscopy; MGO THIN-FILMS; GROWTH; RELAXATION; DEPOSITION; MORPHOLOGY; ADSORPTION; EMISSION; MGO(100); STRAIN; NIO;
D O I
10.1016/j.susc.2009.12.011
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The nucleation and growth of ultrathin MgO films on Mo(0 0 1) have been investigated with scanning tunneling microscopy and spectroscopy. In the initial growth stage, the MgO forms rather uniform islands with rectangular shapes and defined orientation. This behavior reflects a preferential binding of the oxide O ions to the top positions in the Mo support, which can be realized only in confined areas due to the MgO/Mo lattice mismatch. At monolayer coverage, a characteristic square pattern becomes visible in the STM, indicating the formation of an MgO/Mo coincidence lattice. In the coincidence cell, the interface registry alternates between O and Mg ions being in Mo top positions. The resulting imaging contrast in the STM is dominated by a work-function modulation and not by a topographic effect, as demonstrated with STM-conductance and light-emission spectroscopy. The modulated work function in the coincidence cell is assigned to a small buckling of the oxide film with either O or Mg ions being closer to the Mo surface. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:435 / 441
页数:7
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