The interface analyses of inorganic layer for organic electroluminescent devices

被引：15

作者：

Deng, ZB ^{[1
]}

Ding, XM

Liao, LS

Hou, XY

Lee, ST

机构：

[1] Fudan Univ, Surface Phys Lab, Shanghai 200433, Peoples R China

[2] City Univ Hong Kong, Dept Mat & Phys Sci, Hong Kong, Hong Kong, Peoples R China

来源：

DISPLAYS | 2000年 / 21卷 / 2-3期

基金：

中国国家自然科学基金;

关键词：

electroluminescence devices; interface analysis; buffer layer;

D O I：

10.1016/S0141-9382(00)00044-5

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

High efficiency organic electroluminescence devices with an inorganic layer (SiO2) near ITO were fabricated. The buffer layer was studied by UPS, XPS and AES. It is found that the energy offset can be changed by inserting an inorganic buffer layer and that the contamination of the interface could be decreased with ozone treatment, especially the carbon contamination can be eliminated, which increases the stability and the emission intensity of the devices. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：79 / 82

页数：4

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