Enhanced electric field tunable dielectric properties of BaZrxTi1-xO3 relaxor ferroelectrics

被引：110

作者：

Maiti, Tanmoy ^{[1
]}

Guo, R. ^{[1
]}

Bhalla, A. S. ^{[1
]}

机构：

[1] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 18期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2734922

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The environmental friendly lead-free perovskite BaZrxTi1-xO3 (x=0.35, 0.40, and 0.45) relaxor ceramics are developed for the tunable microwave device applications such as tunable filters, phase shifters, antennas, etc. Electric field dependence of dielectric behavior of the ceramic samples has been studied in the temperature range from 300 to 15 K for the tunable dielectric devices. The results have been analyzed in relation to tunability (%) and K factor of the tunable dielectric materials. Very high tunability (similar to 93%) as well as extremely high K factor (similar to 468) has been achieved by manipulating the Zr:Ti concentration in BaZrxTi1-xO3 ceramics. (C) 2007 American Institute of Physics.

引用

页数：3

共 12 条

[1] Low dielectric loss and enhanced tunability of Ba0.6Sr0.4TiO3 based thin films via material compositional design and optimized film processing methods [J].

Cole, MW ;

Nothwang, WD ;

Hubbard, C ;

Ngo, E ;

Ervin, M .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (11) :9218-9225

[2] CHARACTERIZATION OF A TUNABLE THIN-FILM MICROWAVE YBA2CU3O7-X/SRTIO3 COPLANAR CAPACITOR [J].

GALT, D ;

PRICE, JC ;

BEALL, JA ;

ONO, RH .

APPLIED PHYSICS LETTERS, 1993, 63 (22) :3078-3080

[3]

GARCIA D, 2002, CERAM T, V131, P329

[4] Dielectric properties, leakage behaviour, and resistance degradation of thin films of the solid solution series Ba(Ti1-yZry)O-3 [J].

Hoffmann, S ;

Waser, RM .

INTEGRATED FERROELECTRICS, 1997, 17 (1-4) :141-152

[5] The evolution of relaxor behavior in Ti4+ doped BaZrO3 ceramics [J].

Maiti, Tanmoy ;

Guo, R. ;

Bhalla, A. S. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (11)

[6] Electric field dependent dielectric properties and high tunability of BaZrxTi1-xO3 relaxor ferroelectrics [J].

Maiti, Tanmoy ;

Guo, R. ;

Bhalla, A. S. .

APPLIED PHYSICS LETTERS, 2006, 89 (12)

[7] The polar cluster like behavior in Ti4+ substituted BaZrO3 ceramics [J].

Maiti, Tanmoy ;

Alberta, E. ;

Guo, R. ;

Bhalla, A. S. .

MATERIALS LETTERS, 2006, 60 (29-30) :3861-3865

[8]

Schneider S, 2000, MATER RES SOC SYMP P, V596, P109

[9] Highly insulative barium zirconate-titanate thin films prepared by rf magnetron sputtering for dynamic random access memory applications [J].

Wu, TB ;

Wu, CM ;

Chen, ML .

APPLIED PHYSICS LETTERS, 1996, 69 (18) :2659-2661

[10] Dielectric behavior of Ba(Ti1-xZrx)O3 single crystals [J].

Yu, Z ;

Guo, RY ;

Bhalla, AS .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (01) :410-415

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