Material quality requirements for efficient epitaxial film silicon solar cells

被引：30

作者：

Alberi, Kirstin ^{[1
]}

Martin, Ina T. ^{[1
]}

Shub, Maxim ^{[1
]}

Teplin, Charles W. ^{[1
]}

Romero, Manuel J. ^{[1
]}

Reedy, Robert C. ^{[1
]}

Iwaniczko, Eugene ^{[1
]}

Duda, Anna ^{[1
]}

Stradins, Paul ^{[1
]}

Branz, Howard M. ^{[1
]}

Young, David L. ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 07期

关键词：

carrier lifetime; elemental semiconductors; photovoltaic cells; semiconductor epitaxial layers; silicon; solar cells; CHEMICAL-VAPOR-DEPOSITION;

D O I：

10.1063/1.3309751

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The performance of 2-mu m-thick crystal silicon (c-Si) solar cells grown epitaxially on heavily doped wafer substrates is quantitatively linked to absorber dislocation density. We find that such thin devices have a high tolerance to bulk impurities compared to wafer-based cells. The minority carrier diffusion length is about half the dislocation spacing and must be roughly three times the absorber thickness for efficient carrier extraction. Together, modeling and experimental results provide design guidelines for film c-Si photovoltaic cells.

引用

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