Design constraints and guidelines for CdS/CdTe nanopillar based photovoltaics

被引:64
作者
Kapadia, Rehan [1 ]
Fan, Zhiyong
Javey, Ali
机构
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
关键词
SOLAR-CELL;
D O I
10.1063/1.3340938
中图分类号
O59 [应用物理学];
学科分类号
摘要
The performance dependence of a CdS/CdTe nanopillar solar cell on various device and materials parameters is explored while examining its performance limits through detailed device modeling. The optimized cell enables efficiencies >similar to 20% with minimal short circuit current dependence on bulk minority carrier diffusion length, demonstrating the efficient collection of photogenerated carriers, therefore, lowering the materials quality and purity constraints. Given the large p-n junction interface area, the interface recombination velocity is shown to have detrimental effect on the device performance of nanopillar solar cells. In that regard, the CdS/CdTe material system is optimal due to its low interface recombination velocity. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3340938]
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页数:3
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