The study of doped DLC films by Ti ion implantation

被引:50
作者
Cui, L
Li, GQ [1 ]
Chen, WW
Mu, ZX
Zhang, CW
Wang, L
机构
[1] Dalian Univ Technol, State Key Lab Mat Modificat Laser Ion & Electron, Dalian 116024, Peoples R China
[2] Chinese Acad Sci, Dalian Inst Chem Phys, Dalian 116023, Peoples R China
[3] Dalian Univ Technol, Inst Met & Technol, Dalian 116024, Peoples R China
关键词
diamond-like carbon films; ion implantation; Ti doped;
D O I
10.1016/j.tsf.2004.08.051
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Diamond-like carbon (DLC) films were prepared by unbalanced magnetron sputtering. Ti-doped DLC films were obtained by Ti ion implanted into the achieved DLC films using metal vapor vacuum arc (MEVVA). The effects of Ti+ ion implantation on the surface morphology, structure, and tribological properties of the DLC films were investigated by means of atomic force microscopy (AFM), Raman spectroscopy, transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and friction measurement. The smooth and uniform Ti-doped film with the surface roughness of 0.595 nm was obtained. Raman result revealed that the formation of DLC films and sp(2) bonds content increase by Ti+ ion implantation. TEM showed that the nanocrystalline phases of TiC were formed in the films. Ti+ was implanted into the interface between C and substrate, detecting the sputtering depth profiles of the film by XPS; thus, the interface was widened due to reserve diffusion. Tribological test experiment indicated that friction coefficient of the films decreased to approximately 0.15 by Ti+ ion implantation. (C) 2004 Published by Elsevier B.V.
引用
收藏
页码:279 / 282
页数:4
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