A surface sensitive optical method for the evaluation of processed ZnO: exploitation of LO phonon interaction

被引:10
作者
Harada, C [1 ]
Goto, H
Minegishi, T
Suzuki, T
Makino, H
Cho, MW
Yao, T
机构
[1] Tohoku Univ, Interdisciplinary Res Ctr, Aoba Ku, Sendai, Miyagi 9808578, Japan
[2] Tohoku Univ, Mat Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan
关键词
ZnO; etching; surface property; LO phonon;
D O I
10.1016/j.cap.2004.01.037
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on a surface property of bulk ZnO crystals and an optical method to evaluate it. Bulk ZnO crystals have a damaged surface layer due to chemomechanical polishing. We prepared the ZnO crystals by etching, and evaluated the improvement of the surface by high-resolution X-ray diffraction (XRD) and photoluminescence (PL). In PL measurements, the relative intensity of the first order longitudinal optical phonon replica of free exciton (FX-1LO) to second order process (FX-2LO) was compared. The relative intensity becomes weak with increasing etched depth and finally saturates at the etched depth of 5 mum. This result agrees well with XRD results. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:633 / 636
页数:4
相关论文
共 9 条
[1]   Optical investigations on excitons bound to impurities and dislocations in ZnO [J].
Alves, H ;
Pfisterer, D ;
Zeuner, A ;
Riemann, T ;
Christen, J ;
Hofmann, DM ;
Meyer, BK .
OPTICAL MATERIALS, 2003, 23 (1-2) :33-37
[2]   Temperature dependent exciton photoluminescence of bulk ZnO [J].
Hamby, DW ;
Lucca, DA ;
Klopfstein, MJ ;
Cantwell, G .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (06) :3214-3217
[3]   Homoepitaxial growth of high-quality Zn-polar ZnO films by plasma-assisted molecular beam epitaxy [J].
Kato, H ;
Sano, M ;
Miyamoto, K ;
Yao, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (8B) :L1002-L1005
[4]   Electrical properties of bulk ZnO [J].
Look, DC ;
Reynolds, DC ;
Sizelove, JR ;
Jones, RL ;
Litton, CW ;
Cantwell, G ;
Harsch, WC .
SOLID STATE COMMUNICATIONS, 1998, 105 (06) :399-401
[5]  
Lucca DA, 2002, PHYS STATUS SOLIDI B, V229, P845, DOI 10.1002/1521-3951(200201)229:2<845::AID-PSSB845>3.0.CO
[6]  
2-3
[7]  
PERMOGOROV S, 1982, EXCITONS, P177
[8]  
REYNOLDS DC, 1965, PHYS REV, V140, P1726
[9]  
SUSCAVAGE M, 1999, J NITRIDE SEMICOND R, P40