ZnSe-based heterostructures for blue-green lasers

被引:7
作者
Faurie, JP [1 ]
Tournié, E [1 ]
机构
[1] CNRS, CRHEA, F-06560 Valbonne, France
来源
COMPTES RENDUS DE L ACADEMIE DES SCIENCES SERIE IV PHYSIQUE ASTROPHYSIQUE | 2000年 / 1卷 / 01期
关键词
ZnSe; lasers; doping; defects; alloys;
D O I
10.1016/S1296-2147(00)00109-8
中图分类号
P1 [天文学];
学科分类号
0704 ;
摘要
We review the current status of research activity on ZnSe-based heterostructures for blue-green laser diodes (LDs), focusing on a few selected critical issues. Early investigations on defect microstructures allowed to strongly enhance the lifetime of LDs. However, the LD lifetime seems to saturate now, and we point out that the model proposed for explaining the degradation of LD does not predict such a saturation. Next, we detail the mechanisms responsible for carrier compensation in p-type ZnSe and we survey the properties of ZnMgSSe and ZnMgBeSe wide bandgap quaternary alloys which are used as cladding layers in LDs. We emphasize that the low p-type dopability of ZnSe and related materials has a dramatic impact on the performance of LDs in terms of emitted wavelength as well as device lifetime. (C) 2000 Academie des sciences/Editions scientifiques et medicales Elsevier SAS.
引用
收藏
页码:23 / 33
页数:11
相关论文
共 78 条
[1]  
ANDREA RG, 1994, APPL PHYS LETT, V64, P2145
[2]   THE ROLE OF IMPURITIES IN REFINED ZNSE AND OTHER II-VI-SEMICONDUCTORS [J].
BHARGAVA, RN .
JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :15-26
[3]   Structural and optical properties of lattice-matched ZnBeSe layers grown by molecular-beam epitaxy onto GaAs substrates [J].
Bousquet, V ;
Tournie, E ;
Laugt, M ;
Vennegues, P ;
Faurie, JP .
APPLIED PHYSICS LETTERS, 1997, 70 (26) :3564-3566
[4]  
BOUSQUET V, 1998, THESIS CRHEA CNRS
[5]   SELF-COMPENSATION IN NITROGEN-DOPED ZNSE [J].
CHADI, DJ ;
TROULLIER, N .
PHYSICA B, 1993, 185 (1-4) :128-131
[6]   Heteroepitaxial growth of BeSe on vicinal Si(001) surfaces [J].
Chauvet, C ;
Vennegues, P ;
Brunet, P ;
Tournie, E ;
Faurie, JP .
APPLIED PHYSICS LETTERS, 1998, 73 (07) :957-959
[7]   New developments in the heteroepitaxial growth of Be-chalcogenides based semiconducting alloys [J].
Chauvet, C ;
Bousquet, V ;
Tournié, E ;
Faurie, JP .
JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (06) :662-665
[8]  
CHAUVET C, 2000, IN PRESS PHYS REV B, V61
[9]   FIRST-PRINCIPLES STUDY OF THE COMPENSATION MECHANISM FOR NITROGEN ACCEPTORS IN ZNSE [J].
CHEONG, BH ;
PARK, CH ;
CHANG, KJ .
PHYSICAL REVIEW B, 1995, 51 (16) :10610-10614
[10]   Universal curves for optical power degradation of II-VI light-emitting diodes [J].
Chuang, SL ;
Ukita, M ;
Kijima, S ;
Taniguchi, S ;
Ishibashi, A .
APPLIED PHYSICS LETTERS, 1996, 69 (11) :1588-1590