Heteroepitaxial growth of single-phase zinc blende ZnS films on transparent substrates by pulsed laser deposition under H2S atmosphere

被引：22

作者：

Hiramatsu, H ^{[1
]}

Ohta, H ^{[1
]}

Hirano, M ^{[1
]}

Hosono, H ^{[1
]}

机构：

[1] ERATO, Japan Sci & Technol Corp, Hosono Transparent Electro Active Mat, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan

来源：

SOLID STATE COMMUNICATIONS | 2002年 / 124卷 / 10-11期

关键词：

semiconductors; epitaxy; optical properties; X-ray and X-ray spectroscopies;

D O I：

10.1016/S0038-1098(02)00600-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Zinc sulfide (ZnS) films were grown on transparent yittria-stabilized-zirconia (YSZ) substrates by pulsed laser deposition. Deposition at 500 degreesC in a H2S/Ar mixed gas atmosphere of 10 Pa on YSZ(111) substrate resulted in epitaxial growth of a single-phase cubic transparent ZnS film. X-ray reciprocal space mappings and optical spectroscopy clearly indicate that the film is composed of single-phase zinc blende. (C) 2002 Elsevier Science Ltd. All rights reserved.

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收藏

页码：411 / 415

页数：5

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