Optically pumped stimulated emission in ZnS/ZnCdS multiple quantum-wells, MBE-grown on GaP

被引：33

作者：

Ozanyan, KB ^{[1
]}

Nicholls, JE ^{[1
]}

May, L ^{[1
]}

Hogg, JHC ^{[1
]}

Hagston, WE ^{[1
]}

Lunn, B ^{[1
]}

Ashenford, DE ^{[1
]}

机构：

[1] UNIV HULL,DEPT ENGN DESIGN & MANUFACTURE,KINGSTON HULL HU6 7RX,N HUMBERSIDE,ENGLAND

来源：

SOLID STATE COMMUNICATIONS | 1996年 / 99卷 / 06期

关键词：

semiconductors; quantum wells; epitaxy; optical properties; luminescence;

D O I：

10.1016/0038-1098(96)00265-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Optically pumped stimulated emission is observed in a series of ZnS/Zn1-xCdxS multiple quantum-well (MQW) structures, grown on GaP substrates by MBE. We report lasing from a ZnS/Zn0.97Cd0.03S MQW at wavelengths as low as 333nm, the shortest yet reported in a semiconductor heterostructure. The lasing threshold decreases for deeper wells and reaches 6.5 kW.cm(-2) at 8K and 80 kW.cm(-2) at 300K for the MWQs with a Cd-composition of 0.2. The results are compared to known values for similar structures grown on GaAs by MOCVD, which reveals the potential of the GaP-substrate MBE technology for the widest bandgap II-VI heterostructures incorporating ZnS-based ternary alloys. Copyright (C) 1996 Elsevier Science Ltd

引用

页码：407 / 411

页数：5

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