Light hole - Heavy hole exciton crossover in strained ZnS

被引：6

作者：

Ozanyan, KB ^{[1
]}

May, L ^{[1
]}

Nicholls, JE ^{[1
]}

Hogg, JHC ^{[1
]}

Hagston, WE ^{[1
]}

Lunn, B ^{[1
]}

Ashenford, DE ^{[1
]}

机构：

[1] UNIV HULL,DEPT ENGN DESIGN & MANUFACTURE,KINGSTON HULL HU6 7RX,N HUMBERSIDE,ENGLAND

来源：

SOLID STATE COMMUNICATIONS | 1996年 / 97卷 / 05期

关键词：

semiconductors; thin films; optical properties; electronic states (localized); luminescence;

D O I：

10.1016/0038-1098(95)00688-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Near band edge photoluminescence (PL) of ZnS layers MBE-grown on GaP is investigated at 4.2K under fully strained, partially relaxed and fully relaxed conditions. PL peaks are attributed to heavy-hole (hh) or light-hole (lh)-related transitions by comparison with the calculated strain shift for the hh and lh bandgaps. It is shown that, while the free-to-bound (e,A(0)) transition retains its hh character over the whole range from fully strained to fully relaxed conditions, a hh-lh exciton crossover is observed at intermediate strain. This observation is interpreted within the hydrogenic model for shallow states by scaling the hh-related ionisation energies with the lh to hh effective mass ratio and comparing the result with the strain shift of the lh bandgap. Values for the deformation potentials are derived and compared with theoretical and earlier experimental ones.

引用

页码：345 / 348

页数：4

共 13 条

[1] TENTATIVE ANATOMY OF ZNS-TYPE ELECTROLUMINESCENCE [J].

BRINGUIER, E .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (09) :4291-4312

[2] MOLECULAR-BEAM EPITAXY OF ZNS USING AN ELEMENTAL S SOURCE [J].

COOK, JW ;

EASON, DB ;

VAUDO, RP ;

SCHETZINA, JF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02) :901-904

[3] BLUE-GREEN LASER-DIODES [J].

HAASE, MA ;

QIU, J ;

DEPUYDT, JM ;

CHENG, H .

APPLIED PHYSICS LETTERS, 1991, 59 (11) :1272-1274

[4] ROOM-TEMPERATURE BLUE LASING ACTION IN (ZN,CD)SE/ZNSE OPTICALLY PUMPED MULTIPLE QUANTUM-WELL STRUCTURES ON LATTICE-MATCHED (GA,IN)AS SUBSTRATES [J].

JEON, H ;

DING, J ;

NURMIKKO, AV ;

LUO, H ;

SAMARTH, N ;

FURDYNA, JK ;

BONNER, WA ;

NAHORY, RE .

APPLIED PHYSICS LETTERS, 1990, 57 (23) :2413-2415

[5] EXCITONIC AND EDGE EMISSIONS IN MOCVD-GROWN ZNS FILMS AND ZNSE-ZNS SUPERLATTICES [J].

KAWAKAMI, Y ;

TAGUCHI, T ;

HIRAKI, A .

JOURNAL OF CRYSTAL GROWTH, 1988, 89 (2-3) :331-338

[6] INFRARED ABSORPTION DUE TO DONOR STATES IN ZNS CRYSTALS [J].

KUKIMOTO, H ;

SHIONOYA, S ;

KODA, T ;

HIOKI, R .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1968, 29 (06) :935-&

[7] MOLECULAR-BEAM EPITAXY OF ZNS ON (001)GAAS USING ELEMENTAL SOURCES [J].

LANG, M ;

SCHIKORA, D ;

GIFTGE, C ;

WIDMER, T ;

FORSTNER, A ;

BRUNTHALER, G ;

VONORTENBERG, M ;

LISCHKA, K .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (12) :2229-2232

[8] BLUE-GREEN SEMICONDUCTOR-LASERS [J].

NURMIKKO, AV ;

GUNSHOR, RL .

SOLID STATE COMMUNICATIONS, 1994, 92 (1-2) :113-118

[9] EXCITONIC AND TIME-RESOLVED EDGE EMISSIONS OF IODINE-DOPED CUBIC ZNS CRYSTALS EXCITED BY AN EXCIMER LASER [J].

TAGUCHI, T ;

YOKOGAWA, T ;

YAMASHITA, H .

SOLID STATE COMMUNICATIONS, 1984, 49 (06) :551-554

[10] BAND LINEUPS AND DEFORMATION POTENTIALS IN THE MODEL-SOLID THEORY [J].

VAN DE WALLE, CG .

PHYSICAL REVIEW B, 1989, 39 (03) :1871-1883

← 1 2 →