Ordering of the structure of hydrogenated silicon films under the influence of laser radiation

被引：2

作者：

Avakyants, LP ^{[1
]}

Gorelik, VS ^{[1
]}

Kurova, IA ^{[1
]}

Chervyakov, AV ^{[1
]}

机构：

[1] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 117924, Russia

来源：

PHYSICS OF THE SOLID STATE | 1997年 / 39卷 / 12期

基金：

俄罗斯基础研究基金会;

关键词：

Radiation; Spectroscopy; Silicon; Crystallization; Argon;

D O I：

10.1134/1.1130201

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A study is reported of the crystallization of amorphous hydrogenated silicon films under the influence continuous radiation from an argon laser. The structure was investigated by Raman scattering of light. The radiation power density during the annealing process was 1.5-4.5 kW/cm(2) and the exposure was 1/125 sec. The Raman spectra were recorded for power densities below 0.1 kW/cm(2). The power density threshold for the appearance of crystallites was found to be 3.0 kW/cm(2). The phonon localization model was used to show that the size of the crystallites produced for power densities of 3 kW/cm(2) was 40 Angstrom. (C) 1997 American Institute of Physics.

引用

页码：1925 / 1927

页数：3

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