RAMAN-SCATTERING IN AMORPHOUS-SILICON FILMS

被引：17

作者：

AVAKYANTS, LP ^{[1
]}

GERASIMOV, LL ^{[1
]}

GORELIK, VS ^{[1
]}

MANJA, NM ^{[1
]}

OBRAZTSOVA, ED ^{[1
]}

PLOTNIKOV, YI ^{[1
]}

机构：

[1] PN LEBEDEV PHYS INST,MOSCOW 119924,USSR

来源：

JOURNAL OF MOLECULAR STRUCTURE | 1992年 / 267卷

关键词：

D O I：

10.1016/0022-2860(92)87028-T

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Raman spectroscopy is applied to study the microscopic structure of silicon films, chemically vapor deposited at different temperatures T(d). We established, that at T(d) = 450-580-degrees-C the film structure was amorphous. Its ordering increased with T(d)-increasing. At T(d) = 580-620-degrees-C the film structure was mixed: an amorphous matrix with the embedded microcrystals. Minimal crystallites size L = 150 angstrom was estimated both from the TO-phonon broadening and from the intensity ratio of surface-like and bulk crystalline-like modes. At higher temperatures the total number and the average size of the grains increased, its sizes distribution broadened.

引用

页码：177 / 184

页数：8

共 15 条

[1] RAMAN-STUDY OF DIFFERENT PHASES IN ION-IMPLANTED SILICON [J].