RAMAN-STUDY OF DIFFERENT PHASES IN ION-IMPLANTED SILICON

被引：10

作者：

AVAKYANTS, LP ^{[1
]}

OBRASTSOVA, ED ^{[1
]}

GORELIK, VS ^{[1
]}

机构：

[1] PN LEBEDEV PHYS INST,MOSCOW 119924,USSR

来源：

JOURNAL OF MOLECULAR STRUCTURE | 1990年 / 219卷

关键词：

D O I：

10.1016/0022-2860(90)80046-M

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The changing of the phase states from crystalline structure to strong disordered structure of ion implanted silicon has been studied with the help of Raman scattering technique. The different inhomogenous phase states has been established. © 1990.

引用

页码：141 / 145

页数：5

共 6 条

[1]

Avakyants L. P., 1988, PRIB TEKH EKSP, P145

[2]

AVAKYANTS LP, 1988, KR SOOB PHYS, P7

[3] STRUCTURAL RELAXATION AND ORDER IN ION-IMPLANTED SI AND GE [J].

FORTNER, J ;

LANNIN, JS .

PHYSICAL REVIEW B, 1988, 37 (17) :10154-10158

[4] RAMAN-SCATTERING FROM ION-IMPLANTED SILICON [J].

JAIN, KP ;

SHUKLA, AK ;

ASHOKAN, R ;

ABBI, SC ;

BALKANSKI, M .

PHYSICAL REVIEW B, 1985, 32 (10) :6688-6691

[5] INVESTIGATION OF STRUCTURAL CORRELATIONS IN DISORDERED MATERIALS BY RAMAN-SCATTERING MEASUREMENTS [J].

MALINOVSKY, VK ;

NOVIKOV, VN ;

SOKOLOV, AP .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 90 (1-3) :485-488

[6]

SHUKLA AK, 1988, PHYS REV B, V35, P9240

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