STRUCTURAL RELAXATION AND ORDER IN ION-IMPLANTED SI AND GE

[1] STRUCTURAL INFORMATION FROM THE RAMAN-SPECTRUM OF AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1985, 32 (02): : 874 - 878

[2] BEEMAN D, UNPUB

[3] BEEMAN D, COMMUNICATION

[4] CALORIMETRIC STUDIES OF CRYSTALLIZATION AND RELAXATION OF AMORPHOUS SI AND GE PREPARED BY ION-IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 1795 - 1804

[5] HUBLER GK, 1984, MATER RES SOC S P, V27, P217

[6] Lannin J. S., 1987, Disordered semiconductors, P283

[7] RAMAN-SCATTERING AND SHORT-RANGE ORDER IN AMORPHOUS-GERMANIUM [J]. SOLID STATE COMMUNICATIONS, 1985, 53 (11) : 939 - 942

[8] LANNIN JS, 1984, SEMICONDUCTORS SEM B, V21, P175

[9] INFLUENCE OF HYDROGEN ON VIBRATIONAL AND OPTICAL-PROPERTIES OF A-SI1-XHX ALLOYS [J]. PHYSICAL REVIEW B, 1987, 36 (02): : 1146 - 1152

[10] DYNAMIC STRUCTURE FACTOR OF AMORPHOUS-GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (16) : 1720 - 1722

[1] STRUCTURAL INFORMATION FROM THE RAMAN-SPECTRUM OF AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1985, 32 (02): : 874 - 878

[2] BEEMAN D, UNPUB

[3] BEEMAN D, COMMUNICATION

[4] CALORIMETRIC STUDIES OF CRYSTALLIZATION AND RELAXATION OF AMORPHOUS SI AND GE PREPARED BY ION-IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 1795 - 1804

[5] HUBLER GK, 1984, MATER RES SOC S P, V27, P217

[6] Lannin J. S., 1987, Disordered semiconductors, P283

[7] RAMAN-SCATTERING AND SHORT-RANGE ORDER IN AMORPHOUS-GERMANIUM [J]. SOLID STATE COMMUNICATIONS, 1985, 53 (11) : 939 - 942

[8] LANNIN JS, 1984, SEMICONDUCTORS SEM B, V21, P175

[9] INFLUENCE OF HYDROGEN ON VIBRATIONAL AND OPTICAL-PROPERTIES OF A-SI1-XHX ALLOYS [J]. PHYSICAL REVIEW B, 1987, 36 (02): : 1146 - 1152

[10] DYNAMIC STRUCTURE FACTOR OF AMORPHOUS-GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (16) : 1720 - 1722