CALORIMETRIC STUDIES OF CRYSTALLIZATION AND RELAXATION OF AMORPHOUS SI AND GE PREPARED BY ION-IMPLANTATION

[1] Andersen H.H., 1977, HYDROGEN STOPPING PO

[2] PHASE-TRANSITIONS IN AMORPHOUS SI PRODUCED BY RAPID HEATING [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (25) : 2036 - 2039

[3] BAGLEY BG, 1979, AIP C P, V50, P97

[4] SPECIFIC HEAT AND HEAT OF CRYSTALLIZATION OF AMORPHOUS GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) : 4214 - &

[5] CHEN HS, 1982, 4TH P INT C RAP QUEN, P495

[6] Connell G. A. N., 1972, Journal of Non-Crystalline Solids, V8-10, P215, DOI 10.1016/0022-3093(72)90139-1

[7] REGROWTH KINETICS OF AMORPHOUS-GE LAYERS CREATED BY GE-74 AND SI-28 IMPLANTATION OF GE CRYSTALS [J]. SOLID STATE COMMUNICATIONS, 1977, 21 (11) : 1019 - 1021

[8] HEAT OF CRYSTALLIZATION AND MELTING-POINT OF AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 698 - 700

[9] DONOVAN EP, 1984, 1984 MRS S P, V27, P211

[10] DONOVAN EP, 1983, THESIS HARVARD U

[1] Andersen H.H., 1977, HYDROGEN STOPPING PO

[2] PHASE-TRANSITIONS IN AMORPHOUS SI PRODUCED BY RAPID HEATING [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (25) : 2036 - 2039

[3] BAGLEY BG, 1979, AIP C P, V50, P97

[4] SPECIFIC HEAT AND HEAT OF CRYSTALLIZATION OF AMORPHOUS GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) : 4214 - &

[5] CHEN HS, 1982, 4TH P INT C RAP QUEN, P495

[6] Connell G. A. N., 1972, Journal of Non-Crystalline Solids, V8-10, P215, DOI 10.1016/0022-3093(72)90139-1

[7] REGROWTH KINETICS OF AMORPHOUS-GE LAYERS CREATED BY GE-74 AND SI-28 IMPLANTATION OF GE CRYSTALS [J]. SOLID STATE COMMUNICATIONS, 1977, 21 (11) : 1019 - 1021

[8] HEAT OF CRYSTALLIZATION AND MELTING-POINT OF AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 698 - 700

[9] DONOVAN EP, 1984, 1984 MRS S P, V27, P211

[10] DONOVAN EP, 1983, THESIS HARVARD U