Capacitance profiling in the CIGS solar cells

被引：32

作者：

Cwil, Michal

Igalson, Malgorzata

Zabierowski, Pawel

Kaufmann, Chrystian A.

Neisser, Axel

机构：

[1] Warsaw Univ Technol, Fac Phys, PL-00662 Warsaw, Poland

[2] Ind Inst Elect, PL-00241 Warsaw, Poland

[3] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 15期

关键词：

Cu(In; Ga)Se-2; solar cells; defects; capacitance;

D O I：

10.1016/j.tsf.2006.12.102

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Capacitance-voltage profiling and drive level capacitance profiling have been used in order to determine net shallow acceptor concentration in the absorbers of Cu(In,Ga) Se-2-based solar cells. Metastable changes of the net doping distribution produced by reverse bias and light soaking have also been investigated. We discuss the influence of deep levels on the results and attribute apparent non-uniformity of profiles to charges accumulating in the interface region of the device. Conductivity of thin films prepared in the same process as absorbers in the cells under investigation, in the relaxed and light-soaked state has also been measured. The results provide additional arguments that capacitance methods give realistic estimation of doping level of absorber in photovoltaic devices. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：6229 / 6232

页数：4

共 13 条

[11] Electronic properties of Cu(In,Ga)Se2 heterojunction solar cells-recent achievements, current understanding, and future challenges [J].

Rau, U ;

Schock, HW .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 69 (02) :131-147

[12] Charge carrier transport in polycrystalline CuGaSe2 thin films [J].

Schuler, S ;

Nishiwaki, S ;

Beckmann, J ;

Rega, N ;

Brehme, S ;

Siebentritt, S ;

Lux-Steiner, MC .

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002, 2002, :504-507

[13]

Zabierowski P, 2005, MATER RES SOC SYMP P, V865, P367

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