Multi-lattice Monte Carlo model of thin films

被引:23
作者
Huang, HC [1 ]
Gilmer, GH
机构
[1] Hong Kong Polytech Univ, Dept Mech Engn, Kowloon, Hong Kong, Peoples R China
[2] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
来源
JOURNAL OF COMPUTER-AIDED MATERIALS DESIGN | 1999年 / 6卷 / 2-3期
关键词
atomistic simulation; multi-lattice Monte Carlo; texture formation; thin film;
D O I
10.1023/A:1008722515055
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
In previous publications, an atomistic simulator based on a single-lattice or a dual-lattice Monte Carlo method has been proposed and applied to the studies of microstructure evolution in thin films. In this paper, a multilattice Monte Carlo model, an extension to our atomistic simulator of deposition in three dimensions (ADEPT), is presented and applied to the studies of texture competition in thin films. Multiple lattices are mapped onto a single reference lattice, with resulting computational demands (memory and speed) being comparable to those in the single-lattice Monte Carlo model. It is therefore possible to simulate growth competition among crystallites of different orientations, and to study texture formation and explore optimal deposition conditions. As an application, the predominant texture is investigated as a function of collimation and deposition rate. Grains with low energy surfaces parallel to the substrate are found to dominate under the condition of low deposition rate and collimated beam. On the other hand, grains with high surface energy are found to dominate for high deposition rate and uncollimated sputtered beam, and their dominance disappears at extremely high deposition rates.
引用
收藏
页码:117 / 127
页数:11
相关论文
共 13 条
[1]  
Baumann FH, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P89, DOI 10.1109/IEDM.1995.497189
[2]  
CALE TS, 1999, J COMPUT AIDED MAT D
[3]   Texture development mechanisms in ion beam assisted deposition [J].
Dong, L ;
Srolovitz, DJ .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (09) :5261-5269
[4]   Thin film deposition: fundamentals and modeling [J].
Gilmer, GH ;
Huang, HC ;
Roland, C .
COMPUTATIONAL MATERIALS SCIENCE, 1998, 12 (04) :354-380
[5]  
GILMER GH, 1999, IN PRESS THIN SOLID
[6]   DEVELOPMENT OF PREFERRED ORIENTATION IN POLYCRYSTALLINE TIN LAYERS GROWN BY ULTRAHIGH-VACUUM REACTIVE MAGNETRON SPUTTERING [J].
GREENE, JE ;
SUNDGREN, JE ;
HULTMAN, L ;
PETROV, I ;
BERGSTROM, DB .
APPLIED PHYSICS LETTERS, 1995, 67 (20) :2928-2930
[7]   An atomistic simulator for thin film deposition in three dimensions [J].
Huang, HC ;
Gilmer, GH ;
de la Rubia, TD .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3636-3649
[8]   BALLISTIC DEPOSITION SIMULATION OF VIA METALLIZATION USING A QUASI-THREE-DIMENSIONAL MODEL [J].
SMY, T ;
TAIT, N ;
BRETT, MJ .
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1991, 10 (01) :130-135
[9]   Ab initio calculations of energies and self-diffusion on flat and stepped surfaces of Al and their implications on crystal growth [J].
Stumpf, R ;
Scheffler, M .
PHYSICAL REVIEW B, 1996, 53 (08) :4958-4973
[10]   Hyperdynamics: Accelerated molecular dynamics of infrequent events [J].
Voter, AF .
PHYSICAL REVIEW LETTERS, 1997, 78 (20) :3908-3911