Single crystal growth and properties of MgB2 and Mg(B1-x Cx)2

被引：16

作者：

Kazakov, SM ^{[1
]}

Karpinski, J

Jun, J

Geiser, P

Zhigadlo, ND

Puzniak, R

Mironov, AV

机构：

[1] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[3] Moscow MV Lomonosov State Univ, Dept Chem, Moscow 119899, Russia

来源：

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2004年 / 408卷

关键词：

single crystals; Mg(B1-x; C-x)(2); high pressure; carbon doping; micro-hardness;

D O I：

10.1016/j.physc.2004.02.061

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single crystals of MgB2 and Mg(B1-xCx)(2) have been grown using cubic anvil technique. T-c values vary in a wide range (39-9 K) with carbon content varying from 0% up to 16%. Using SiC as the precursor leads to C and not to Si Substituted crystals. Micro-hardness measurements performed on MgB2 single crystals give average value of 1100 kg/mm(2). (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：123 / 124

页数：2

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