Analysis on the high luminous flux white light from GaN-based laser diode

被引：12

作者：

Xu, Y. ^{[1
]}

Hu, H. ^{[1
]}

Chen, L. ^{[1
]}

Song, G. ^{[1
]}

Zhuang, W. ^{[2
,3
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

[2] Gen Res Inst NonFerrous Met, Natl Engn Res Ctr Rare Earth Mat, Beijing 100088, Peoples R China

[3] Grirem Adv Mat Co Ltd, Beijing 100088, Peoples R China

来源：

APPLIED PHYSICS B-LASERS AND OPTICS | 2010年 / 98卷 / 01期

关键词：

EMITTING-DIODES;

D O I：

10.1007/s00340-009-3651-4

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We fabricated a phosphor-conversion white light using an InGaN laser diode that emits 445 nm and phosphor that emits in the yellow region when excited by the blue laser light. At 500 mA injection current the luminous flux and the luminous efficacy were 113 lm and 44 lm/W, respectively. The relationship of the luminous flux and the luminous efficacy of the white light with an injection current were discussed. Based on the evaluation method for luminous efficacy of light sources established by the Commission International de I'Eclairage (CIE) and the phosphor used in this experiment, a theoretical analysis of the experiment results and the maximum luminous efficacy of this white light fabrication method were also presented.

引用

页码：83 / 86

页数：4

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