Metal emitter SiGe:C HBTs

被引：10

作者：

Donkers, JJTM ^{[1
]}

Vanhoucke, T ^{[1
]}

Agarwal, P ^{[1
]}

Hueting, RJE ^{[1
]}

Meunier-Beillard, P ^{[1
]}

Vijayaraghavan, MN ^{[1
]}

Magnée, PHC ^{[1
]}

Verheijen, MA ^{[1
]}

de Kort, R ^{[1
]}

Slotboom, JW ^{[1
]}

机构：

[1] Philips Res Leuven, B-3001 Louvain, Belgium

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419121

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SiGe:C heterojunction bipolar transistors (HBTs) offer high cut-off frequencies, f(T), but low open base breakdown voltages, BV(CEO), due to the relatively high current gain, h(FE). In this paper, we show that the integration of a metal emitter, made by complete silicidation of a mono-emitter, increases the base current, I(B) without reducing the collector current, I(C). Hence, the BVCEO is increased without affecting the f(T). Furthermore, this metal emitter reduces the emitter series resistance, R(E), and increases the f(T) compared with a monoemitter. SiGe:C HBTs with f(T) = 230GHz and BV(CEO) = 1-8V have been realised using a metal emitter in a self-aligned integration scheme.

引用

页码：243 / 246

页数：4

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