Measurement of collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBT's

被引：43

作者：

Niu, GF ^{[1
]}

Cressler, JD

Zhang, SM

Gogineni, U

Ahlgren, DC

机构：

[1] Auburn Univ, Alabama Microelect Sci & Technol Ctr, Dept Elect Engn, Auburn, AL 36849 USA

[2] IBM Corp, Microelect, Hopewell Jct, NY 12533 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 05期

关键词：

avalanche multiplication; dead space" effect; early effect; HBT; impact ionization; nonequilibrium transport; SiGe;

D O I：

10.1109/16.760410

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents measurements of the avalanche multiplication factor (M - 1) in SiGe HBT's using a new technique capable of separating the avalanche multiplication and Early effect contributions to the increase of collector current with collector-base bias, as well as allowing safe measurements at practical current densities. The impact of collector doping, current density, Ge profile, and operation temperature are reported for the first time using measured and simulated results from a production quality UHV/CVD Sice HBT technology. Limitations of the technique in the presence of significant self-heating are discussed. By turning on the secondary hole impact ionization, we revealed the difference in impact ionization between strained SiGe and Si in the presence of the "dead space" effect, Despite its smaller bandgap, the compressively strained SiGe layer shows an apparent decrease in the secondary hole impact ionization rate compared to Si.

引用

页码：1007 / 1015

页数：9

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