Optimum dimensions of the epilayer for third-order intermodulation distortion

被引：7

作者：

de Vreede, LCN ^{[1
]}

van Noort, W ^{[1
]}

Jos, HFF ^{[1
]}

de Graaff, HC ^{[1
]}

Slotboom, JW ^{[1
]}

Tauritz, JL ^{[1
]}

机构：

[1] Delft Univ Technol, Dept Informat Technol & Syst, Microwave Component Grp, ECTM,DIMES, NL-2600 GB Delft, Netherlands

来源：

PROCEEDINGS OF THE 1998 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 1998年

关键词：

D O I：

10.1109/BIPOL.1998.741916

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dominant bipolar transistor distortion sources are identified with respect to the biasing conditions. Mixed-level simulator results are compared with small- and large-signal measurements. An optimum epilayer design map for third-order intermodulation distortion is presented.

引用

页码：168 / 171

页数：4

共 7 条

[1] Extension of the collector charge description for compact bipolar epilayer models [J].