Extension of the collector charge description for compact bipolar epilayer models

被引:2
作者
de Vreede, LCN [1 ]
de Graaff, HC [1 ]
Tauritz, JL [1 ]
Baets, RGF [1 ]
机构
[1] Delft Univ Technol, Delft Inst Microelect & Submicron Technol, Microwave Component Grp, Delft, Netherlands
关键词
D O I
10.1109/16.658842
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, an extension to the collector charge description for compact bipolar epilayer models is presented. With this extension, monotonic f(T) and Early-voltage behavior is ensured when transistor operation extends into the quasisaturation region, The modification leads to a major improvement in the modeling of nonlinear distortion at high current levels and high frequencies.
引用
收藏
页码:277 / 285
页数:9
相关论文
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