Advanced modeling of distortion effects in bipolar transistors using the Mextram model

被引：12

作者：

deVreede, LCN

deGraaff, HC

Mouthaan, K

deKok, M

Tauritz, JL

Baets, RGF

机构：

[1] Delft Inst. Microlectron. S., Delft University of Technology

[2] Microwave Component Group, Lab. Telecommunication Remote S.

[3] Philips Research Laboratories, Eindhoven

[4] Lab. Telecommunication Remote S., Department of Electrical Engineering

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1996年 / 31卷 / 01期

关键词：

D O I：

10.1109/4.485873

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The modeling of distortion effects in bipolar transistors due to the onset of quasi-saturation is considered. Computational results obtained using the Mextram and Gummel-Poon models as implemented in a harmonic balance simulator are compared with measured results.

引用

页码：114 / 121

页数：8

共 21 条

[1]

[Anonymous], SEMICONDUCTOR DEVICE

[2] EQUIVALENT CIRCUIT OF A TRANSISTOR WITH A LIGHTLY DOPED COLLECTOR OPERATING IN SATURATION [J].