MEASUREMENT OF ONSET OF QUASI-SATURATION IN BIPOLAR-TRANSISTORS

[1] EQUIVALENT CIRCUIT OF A TRANSISTOR WITH A LIGHTLY DOPED COLLECTOR OPERATING IN SATURATION [J]. SOLID-STATE ELECTRONICS, 1968, 11 (02) : 241 - +

[2] HIGH-CURRENT REGIMES IN TRANSISTOR COLLECTOR REGIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) : 257 - 263

[3] TEMPERATURE COEFFICIENT OF RESISTIVITY OF SILICON AND GERMANIUM NEAR ROOM TEMPERATURE [J]. SOLID-STATE ELECTRONICS, 1968, 11 (07) : 639 - &

[4] de Graaff H. C., 1971, Philips Research Reports, V26, P191

[5] COLLECTOR MODELS FOR BIPOLAR TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (05) : 587 - 600

[6] TEMPERATURE DEPENDENCE OF HOT ELECTRON DRIFT VELOCITY IN SILICON AT HIGH ELECTRIC FIELD [J]. SOLID-STATE ELECTRONICS, 1968, 11 (10) : 917 - +

[7] SATURATION CHARACTERISTICS OF HIGH-VOLTAGE TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08): : 1384 - &

[8] PALS JA, 1969, PHILIPS RES REP, V24, P53

[9] THE ELECTRICAL CONDUCTIVITY AND HALL EFFECT OF SILICON [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (464): : 193 - 200

[10] SMITH WR, 1971, INT J ELECTRON, V31, P201, DOI 10.1080/00207217108938217

[1] EQUIVALENT CIRCUIT OF A TRANSISTOR WITH A LIGHTLY DOPED COLLECTOR OPERATING IN SATURATION [J]. SOLID-STATE ELECTRONICS, 1968, 11 (02) : 241 - +

[2] HIGH-CURRENT REGIMES IN TRANSISTOR COLLECTOR REGIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) : 257 - 263

[3] TEMPERATURE COEFFICIENT OF RESISTIVITY OF SILICON AND GERMANIUM NEAR ROOM TEMPERATURE [J]. SOLID-STATE ELECTRONICS, 1968, 11 (07) : 639 - &

[4] de Graaff H. C., 1971, Philips Research Reports, V26, P191

[5] COLLECTOR MODELS FOR BIPOLAR TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (05) : 587 - 600

[6] TEMPERATURE DEPENDENCE OF HOT ELECTRON DRIFT VELOCITY IN SILICON AT HIGH ELECTRIC FIELD [J]. SOLID-STATE ELECTRONICS, 1968, 11 (10) : 917 - +

[7] SATURATION CHARACTERISTICS OF HIGH-VOLTAGE TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08): : 1384 - &

[8] PALS JA, 1969, PHILIPS RES REP, V24, P53

[9] THE ELECTRICAL CONDUCTIVITY AND HALL EFFECT OF SILICON [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (464): : 193 - 200

[10] SMITH WR, 1971, INT J ELECTRON, V31, P201, DOI 10.1080/00207217108938217