A MODEL FOR THE NONLINEAR BASE-COLLECTOR DEPLETION LAYER CHARGE AND ITS INFLUENCE ON INTERMODULATION DISTORTION IN BIPOLAR-TRANSISTORS

被引：13

作者：

JOS, HFF

机构：

[1] Development Department of Discrete Semiconductors, Philips

来源：

SOLID-STATE ELECTRONICS | 1990年 / 33卷 / 07期

关键词：

D O I：

10.1016/0038-1101(90)90072-M

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A model of the collector-base depletion layer is worked out. Doping profiles of base and epitaxial layer to substrate transition are approximated by exponential functions. The depletion approximation is used. The model provides relations between transistor doping profiles and collector-base capacitance as a function of bias voltage and collector current density. Higher order derivatives of the capacitance with respect to bias voltage and collector current are calculated and their influence on third order harmonic distortion is shown. Relations between transistor doping profiles and third order distortion are evaluated. Since the model is essentially one-dimensional it is only valid at low and intermediate collector current densities. © 1990.

引用

页码：907 / 915

页数：9

共 11 条

[1] TRANSISTOR DESIGN FOR LOW DISTORTION AT HIGH-FREQUENCIES [J].