Electron and hole transport in undoped Bi0.96Sb0.04 alloys

被引:14
作者
Lenoir, B
Selme, MO
Demouge, A
Scherrer, H
Ivanov, YV
Ravich, YI
机构
[1] Ecole Mines, UMR 7556, Phys Mat Lab, F-54042 Nancy, France
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[3] St Petersburg State Tech Univ, St Petersburg 195251, Russia
关键词
D O I
10.1103/PhysRevB.57.11242
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The complete set of the 12 independent galvanomagnetic coefficients was measured in weak magnetic fields in undoped Bi0.96Sb0.04 alloys within the temperature range 77-300 K. The analysis of these coefficients together with the two components of thermopower was fulfilled by the least-squares method using Hall and magnetoresistance factors. These factors were calculated based on a model taking into account the peculiarities of the band structure and the scattering of electrons and holes by acoustic phonons, as well as interband (recombination) scattering. The temperature dependence of carrier mobilities and densities was estimated and compared with that of pure bismuth. The mobilities of T holes are lower than those of electrons, and the difference in the alloy is more pronounced than in pure bismuth. The deviation from unity of the Hall and magnetoresistance factors of L electrons is greater than in bismuth. This result is confirmed through direct analysis of the experimental data on the galvanomagnetic coefficients.
引用
收藏
页码:11242 / 11250
页数:9
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