Misorientation dependence of grain boundary resistivity in Nb-doped barium titanate

被引：3

作者：

Hayashi, K ^{[1
]}

Yamamoto, T ^{[1
]}

Ikuhara, Y ^{[1
]}

Sakuma, T ^{[1
]}

机构：

[1] Univ Tokyo, Sch Engn, Dept Mat Sci, Bunkyo Ku, Tokyo 1138656, Japan

来源：

ELECTROCERAMICS IN JAPAN III | 2000年 / 181-1卷

关键词：

coincidence site lattice (CSL); positive temperature coefficient of resistivity; (PTCR); potential barrier; single grain boundary;

D O I：

10.4028/www.scientific.net/KEM.181-182.51

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The influence of orientation of grain boundary plane as well as misorientation of grain boundary on positive temperature coefficient of resistivity (PTCR) was examined in 0.1mol%Nb-doped barium titanate. The magnitude of the PTCR effect mainly depends on tilt component of misorientation as compared to twist one. This dependence is considered to be related to the fact that grain boundary with low-index plane has low grain boundary energy, and hence hinders the formation of potential barrier.

引用

页码：51 / 54

页数：4

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