Grain boundary electrical barriers in positive temperature coefficient thermistors

被引：32

作者：

Hayashi, K ^{[1
]}

Yamamoto, T ^{[1
]}

Ikuhara, Y ^{[1
]}

Sakuma, T ^{[1
]}

机构：

[1] Univ Tokyo, Dept Mat Sci, Sch Engn, Bunkyo Ku, Tokyo 1138656, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 05期

关键词：

D O I：

10.1063/1.371140

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Resistance-temperature, current-voltage, and capacitance-voltage characteristics have been measured in niobium-doped barium titanate bicrystals. The analysis by device simulation reveals that potential barrier with a semiconductor-insulator-semiconductor structure can consistently interpret the observed characteristics rather than the double Schottky barrier. Absence of sub-ohmic behavior in the current-voltage characteristics and excess low-frequency capacitance at zero bias are caused by the spatially distributed traps at the insulating layer. (C) 1999 American Institute of Physics. [S0021-8979(99)03617-8].

引用

页码：2909 / 2913

页数：5

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