DETERMINATION OF GRAIN-BOUNDARY DEFECT-STATE DENSITIES FROM TRANSPORT MEASUREMENTS

被引:58
作者
EVANS, PV
NELSON, SF
机构
[1] IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.348506
中图分类号
O59 [应用物理学];
学科分类号
摘要
Transport of majority carriers across the potential barriers frequently found at grain boundaries in semiconductors is treated by considering sequential drift diffusion and thermionic emission processes. The regimes where the thermionic or drift-diffusion approximations can reasonably be made are readily determined from the analysis. Over a wide doping range, we find boundary transport to be under mixed control. Numerical calculations are made for a given barrier height with a range of bulk doping levels. A deconvolution scheme to determine defect-state densities is given and tested for a variety of densities of states.
引用
收藏
页码:3605 / 3611
页数:7
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