ELECTRONIC TRANSPORT ACROSS A GRAIN-BOUNDARY IN SEMICONDUCTORS

被引：6

作者：

SIMEONOV, SS

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.36.9171

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9171 / 9181

页数：11

共 10 条

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[3] ELECTRONIC TRANSPORT AT GRAIN-BOUNDARIES IN SILICON [J].

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SHAW, JG ;

CARD, HC .

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[4]

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[5]

MUELLER RK, 1961, J APPL PHYS, V48, P3081

[6] DIFFUSION-LIMITED QUASI FERMI LEVEL NEAR A SEMICONDUCTOR GRAIN-BOUNDARY [J].

PIKE, GE .

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[7]

PIKE GE, 1981, ADV CERAM, V1, P53

[8]

RHODERICK EH, 1978, METAL SEMICONDUCTOR, P92

[9] ANOMALOUS LOW-FREQUENCY GRAIN-BOUNDARY CAPACITANCE IN SILICON [J].

SEAGER, CH ;

PIKE, GE .

APPLIED PHYSICS LETTERS, 1980, 37 (08) :747-749

[10] SURFACE BARRIERS AT SEMICONDUCTOR CONTACTS [J].

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