ELECTRONIC TRANSPORT AT GRAIN-BOUNDARIES IN SILICON

[1] ADLER MS, 1979, NUMERICAL ANAL SEMIC, P3

[2] ELECTRON AND HOLE MOBILITIES IN SILICON AS A FUNCTION OF CONCENTRATION AND TEMPERATURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 292 - 295

[3] TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) : 5565 - 5570

[4] BUERGER MJ, 1966, PRECESSION METHOD XR

[5] THE PHOTOCONDUCTIVITY OF POLYCRYSTALLINE SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3671 - 3673

[6] ELECTRONIC PROCESSES AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SEMICONDUCTORS UNDER OPTICAL ILLUMINATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 397 - 402

[7] COTTRELL PE, 1979, NUMERICAL ANAL SEMIC, P31

[8] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1035 - &

[9] METAL-SEMICONDUCTOR RECTIFIERS AND TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (05) : 445 - 452

[10] KANI K, 1979, NUMERICAL ANAL SEMIC, P104

[1] ADLER MS, 1979, NUMERICAL ANAL SEMIC, P3

[2] ELECTRON AND HOLE MOBILITIES IN SILICON AS A FUNCTION OF CONCENTRATION AND TEMPERATURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 292 - 295

[3] TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) : 5565 - 5570

[4] BUERGER MJ, 1966, PRECESSION METHOD XR

[5] THE PHOTOCONDUCTIVITY OF POLYCRYSTALLINE SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3671 - 3673

[6] ELECTRONIC PROCESSES AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SEMICONDUCTORS UNDER OPTICAL ILLUMINATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 397 - 402

[7] COTTRELL PE, 1979, NUMERICAL ANAL SEMIC, P31

[8] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1035 - &

[9] METAL-SEMICONDUCTOR RECTIFIERS AND TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (05) : 445 - 452

[10] KANI K, 1979, NUMERICAL ANAL SEMIC, P104