DIFFUSION-LIMITED QUASI FERMI LEVEL NEAR A SEMICONDUCTOR GRAIN-BOUNDARY

被引：16

作者：

PIKE, GE

机构：

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.30.3274

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3274 / 3276

页数：3

共 14 条

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[6]

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[9] GRAIN-BOUNDARY STATES AND VARISTOR BEHAVIOR IN SILICON BICRYSTALS [J].

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[10] DIRECT MEASUREMENT OF ELECTRON-EMISSION FROM DEFECT STATES AT SILICON GRAIN-BOUNDARIES [J].

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