Er-3+-doped Al2O3 thin films by plasma-enhanced chemical vapor deposition (PECVD) exhibiting a 55-nm optical bandwidth

被引：56

作者：

Chryssou, CE ^{[1
]}

Pitt, CW ^{[1
]}

机构：

[1] Univ London Univ Coll, Dept Elect & Elect Engn, London WC1E 7JE, England

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1998年 / 34卷 / 02期

关键词：

coplanar waveguides; erbium materials/devices; glow discharges; photoluminescent materials/devices;

D O I：

10.1109/3.658711

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first deposition of Er3+-doped aluminum oxide thin-film optical waveguides by plasma-enhanced chemical vapor deposition (PECVD), The aluminum and erbium precursors used for the deposition of the thin films were trimethyl-aluminum and Er tri-chelate of 2,2,6,6-tetramethylheptane-3,5 dione respectively, The samples show broad, room-temperature photoluminescence at lambda = 1.5333 mu m. The Er3+ concentration ranged from 0.01-0.2 At%. The full width half maximum (FWHM) of the Er3+ emission spectrum is 55 nm, considerably broader than in silica glass, The radiative lifetime has been measured at 50-mW pump power.

引用

页码：282 / 285

页数：4

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