High-power inter-miniband lasing in intrinsic superlattices

被引:48
作者
Tredicucci, A [1 ]
Capasso, F [1 ]
Gmachl, C [1 ]
Sivco, DL [1 ]
Hutchinson, AL [1 ]
Cho, AY [1 ]
Faist, J [1 ]
Scamarcio, G [1 ]
机构
[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
关键词
D O I
10.1063/1.121365
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the realization of a mid-infrared (lambda similar or equal to 7 mu m) quantum-cascade laser. in which the emission process takes place between the two lowest minibands of an intrinsic superlattice. Contrary to previous lasers based on doped superlattices, here the dopants are located only inside suitably designed injector regions, where positive ionized donors and negative electrons are arranged to compensate the applied external field across the superlattices. This reduces impurity scattering and translates into low threshold currents (4.2 kA/cm(2) at 10 K) and into room temperature operation, without compromising the large current-carrying capabilities of the minibands. Peak powers of similar to 1.3 W per facet have been obtained from broad-area devices at 10 K, with still more than 1 W at 120 K and 400 mW at 200 K. Effects related to the finite size of the superlattices become visible in the spectral properties, owing to the reduced broadening, and have to be taken into account to accurately describe the laser's behavior. [S0003-6951(98)04419-2].
引用
收藏
页码:2388 / 2390
页数:3
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