Luminescence properties of GaN and Al0.14Ga0.86N/GaN superlattice doped with europium

被引：84

作者：

Lozykowski, HJ ^{[1
]}

Jadwisienczak, WM

Han, J

Brown, IG

机构：

[1] Ohio Univ, Stocker Ctr, Sch Elect Engn & Comp Sci, Athens, OH 45701 USA

[2] Ohio Univ, Stocker Ctr, Condensed Matter & Surface Sci Program, Athens, OH 45701 USA

[3] Sandia Natl Labs, Albuquerque, NM 87185 USA

[4] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 06期

关键词：

D O I：

10.1063/1.1306645

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of visible photoluminescence and cathodoluminescence of Eu3+ ions implanted in GaN and Al0.14Ga0.86N/GaN superlattice. The sharp characteristic emission lines corresponding to Eu3+ intra-4f(6)-shell transitions are resolved and observed over the temperature range of 7-330 K. The luminescence shows dominant transitions D-5(0)-->F-7(1,2,3) and weaker D-5(0)-->F-7(4,5,6) and D-5(1)-->F-7(1). The luminescence emission is very weakly temperature dependent. The intensity of Eu3+ emission from Al0.14Ga0.86N/GaN superlattice annealed in N-2 is similar to 58% stronger than from Eu3+ in the GaN layer. The Al0.14Ga0.86N/GaN superlattice and GaN epilayers may be suitable as a material for visible optoelectronic devices. (C) 2000 American Institute of Physics. [S0003- 6951(00)01332-2].

引用

页码：767 / 769

页数：3

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