Induced Density of States model for weakly-interacting organic semiconductor interfaces

被引：123

作者：

Vazquez, H.

Flores, F. ^{[1
]}

Kahn, A.

机构：

[1] Univ Autonoma Madrid, Dept Fis Teor Mat Condensada, E-28049 Madrid, Spain

[2] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

来源：

ORGANIC ELECTRONICS | 2007年 / 8卷 / 2-3期

基金：

美国国家科学基金会;

关键词：

charge neutrality level; interface states; energy level alignment; organic semiconductor; Fermi level pinning; metal/organic interface; organic/organic interface;

D O I：

10.1016/j.orgel.2006.07.006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The Induced Density of Interface States model is revisited and discussed for weakly-interacting organic semiconductor junctions. First, unreactive 'ideal' Au/organic interfaces are analyzed and described as a function of the organic Charge Neutrality Level (CNL) and the slope parameter S-MO specific to the case of An: these values are similar, though not necessarily equal, to those obtained from a fit to reactive and unreactive metal/organic interfaces. Then, using the information provided by the Au/organic cases, we obtain the organic/organic screening parameters and calculate molecular level offsets without any adjustable parameter. The good agreement found between our theoretical results and experimental data for weakly-interacting metal/organic and organic/organic interfaces shows that our analysis in terms of the organic CNL and the corresponding (S-MO or S-OO) slope parameter provides a consistent and predictive description of the energy level alignment at these interfaces. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：241 / 248

页数：8

共 40 条

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