UTC-PD-based optoelectronic components for high-frequency and high-speed applications

被引：7

作者：

Kodama, Satoshi ^{[1
]}

Ito, Hiroshi ^{[1
]}

机构：

[1] NTT Corp, NTT Photon Labs, Atsugi, Kanagawa 2430198, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2007年 / E90C卷 / 02期

关键词：

uni-traveling-carrier photodiode (UTC-PD); optoelectronic device; high speed; high frequency; millimeter-wave; monolithic integration; optical gate; signal processing;

D O I：

10.1093/ietele/e90-c.2.429

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The uni-traveling-carrier photodiode (UTC-PD) is an innovative PD that has a unique operation mode in which only electrons act as the active carriers, resulting in ultrafast response and high electrical output power at the same time. This paper describes the features of the UTC-PD and its excellent performance. In addition, UTC-PD-based optoelectronic devices integrated with various elements, such as passive and active devices, are presented. These devices are promising for various applications, such as millimeter- and submillimeter-wave generation up to the terahertz range and ultrafast optical signal processing at data rates of up to 320 Gbit/s.

引用

页码：429 / 435

页数：7

共 35 条

[21] 100 and 160 Gbit/s operation of uni-travelling-carrier photodiode module [J].

Muramoto, Y ;

Yoshino, K ;

Kodama, S ;

Hirota, Y ;

Ito, H ;

Ishibashi, T .

ELECTRONICS LETTERS, 2004, 40 (06) :378-380

[22] Uni-travelling-carrier photodiode module with bandwidth of 80 GHz [J].

Muramoto, Y ;

Hirota, Y ;

Yoshino, K ;

Ito, H ;

Ishibashi, T .

ELECTRONICS LETTERS, 2003, 39 (25) :1851-1852

[23]

Murata K, 2000, IEEE MTT-S, P345, DOI 10.1109/MWSYM.2000.861010

[24]

Murata K, 1999, IEICE T COMMUN, VE82B, P1228

[25]

Ohata K., 2002, 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315), P298, DOI 10.1109/ISSCC.2002.993050

[26]

Ohno T., 1999, International Topical Meeting on Microwave Photonics. MWP'99. Technical Digest (Cat. No.99EX301), P253, DOI 10.1109/MWP.1999.819697

[27]

Sahri N, 1999, IEICE T ELECTRON, VE82C, P1307

[28] Packaged photonic probes for an on-wafer broad-band millimeter-wave network analyzer [J].

Sahri, N ;

Nagatsuma, T .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (09) :1225-1227

[29] 80Gbit/s optoelectronic delayed flip-flop circuit using resonant tunnelling diodes and uni-travelling-carrier photodiode [J].

Sano, K ;

Murata, K ;

Otsuji, T ;

Akeyoshi, T ;

Shimizu, N ;

Sano, E .

ELECTRONICS LETTERS, 1999, 35 (16) :1376-1377

[30] Ultra-fast optoelectronic circuit using resonant tunnelling diodes and unitravelling-carrier photodiode [J].

Sano, K ;

Murata, K ;

Akeyoshi, T ;

Shimizu, N ;

Otsuji, T ;

Yamamoto, M ;

Ishibashi, T ;

Sano, E .

ELECTRONICS LETTERS, 1998, 34 (02) :215-217

← 1 2 3 4 →